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    DPG60IM300PC 0.0 0.4 0.8 1.2 1.6 2.0 20 [A] 40 F 60 80 100 120 0 200 400 600 40 50 60 70 80 100 101 102 103 104 0.1 1.0 0 40 80 120 160 0.2 0.4 0.6 Kf 0.8 1.0 1.2 1.4 TVJ [°C] -diF/dt [A/μs] t[ms] 0200400600 200 300 400 [ns] 500 600 700 800 900 1000 2 3 4 5 6 7 VFR 8 9 10 0 200 400 600 4 6 8 [A] 10 12 14 16 18 20 0 200 400 600 0.2 0.3 C] 0.4 rr 0.5 0.6 0.7 Q [μ VF [V -diF/dt [A/μs] ] ZthJC [K/W] IRM Qrr VFR tfr TVJ = 150°C Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qrr versus -diF/dt Fig. 3 Typ. reverse recovery current IRM versus -diF/dt Fig. 4 Typ. dynamic parameters Qrr,IRM versus TVJ Fig. 5 Typ. reverse recov. time trrversus -diF/dt Fig. 6 Typ. forward recovery voltage VFR & time tfr versus diF/dt Fig. 8 Transient thermal impedance junction to case 25°C I -diF/dt [A/μs] IRM trr [ns] -diF/dt [A/μs] tfr [V] 0 200 400 600 2 4 J]6 rec 8 10 12 14 16 E [μ -diF/dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF/dt IF = 120 A 60 A 30 A IF = 120 A 60 A 30 A IF = 120 A 60 A 30 A IF = 120 A 60 A 30 A TVJ =125°C VR = 200 V TVJ =125°C VR = 200 V TVJ = 125°C VR = 200 V IF = 60 A TVJ =125°C VR = 200 V TVJ = 125°C VR = 200 V Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20131125a Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |